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Pregled bibliografske jedinice broj: 668500

Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes


Jakšić, Milko; Grilj, Veljko; Skukan, Natko; Majer, Marija; Jung, H.K.; Kim, J.Y.; Lee, N.H.
Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes // Journal of Instrumentation, 8 (2013), P09003-P09016 doi:10.1088/1748-0221/8/09/P09003 (međunarodna recenzija, članak, znanstveni)


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Naslov
Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes

Autori
Jakšić, Milko ; Grilj, Veljko ; Skukan, Natko ; Majer, Marija ; Jung, H.K. ; Kim, J.Y. ; Lee, N.H.

Izvornik
Journal of Instrumentation (1477-9226) 8 (2013); P09003-P09016

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Radiation damage; Solid state detectors; Radiation-hard detectors; Accelerator applications

Sažetak
Simple and cost-effective solutions using Si PIN diodes as detectors are presently utilized in various radiation-related applications in which excessive exposure to radiation degrades their charge transport properties. One of the conventional methods for the radiation hardness testing of such devices is time-consuming irradiation with electron beam or gamma-ray irradiation facilities, high-energy proton accelerators, or with neutrons from research reactors. Recently, for the purpose of radiation hardness testing, a much faster nuclear microprobe based approach utilizing proton irradiation has been developed. To compare the two different irradiation techniques, silicon PIN diodes have been irradiated with a Co-60 gamma radiation source and with a 6MeV proton microbeam. The signal degradation in the silicon PIN diodes for both irradiation conditions has been probed by the IBIC (ion beam induced charge) technique, which can precisely monitor changes in charge collection efficiency. The results presented are reviewed on the basis of displacement damage calculations and NIEL (non-ionizing energy loss) concept.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
098-1191005-2876 - Procesi interakcije ionskih snopova i nanostrukture (Milko Jakšić, )

Ustanove
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Milko Jakšić (autor)

Avatar Url Marija Majer (autor)

Avatar Url Veljko Grilj (autor)

Citiraj ovu publikaciju

Jakšić, Milko; Grilj, Veljko; Skukan, Natko; Majer, Marija; Jung, H.K.; Kim, J.Y.; Lee, N.H.
Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes // Journal of Instrumentation, 8 (2013), P09003-P09016 doi:10.1088/1748-0221/8/09/P09003 (međunarodna recenzija, članak, znanstveni)
Jakšić, M., Grilj, V., Skukan, N., Majer, M., Jung, H., Kim, J. & Lee, N. (2013) Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes. Journal of Instrumentation, 8, P09003-P09016 doi:10.1088/1748-0221/8/09/P09003.
@article{article, year = {2013}, pages = {P09003-P09016}, DOI = {10.1088/1748-0221/8/09/P09003}, keywords = {Radiation damage, Solid state detectors, Radiation-hard detectors, Accelerator applications}, journal = {Journal of Instrumentation}, doi = {10.1088/1748-0221/8/09/P09003}, volume = {8}, issn = {1477-9226}, title = {Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes}, keyword = {Radiation damage, Solid state detectors, Radiation-hard detectors, Accelerator applications} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus
  • MEDLINE


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