Alternating current electrochemical anodisation of silicon on insulator layers (CROSBI ID 604952)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Ivanda, Mile ; Đerek, Vedran ; Balarin, Maja ; Gamulin, Ozren ; Kosović, Marin ; Music, Svetozar ; Ristic, Mira ; Crnjak Orel, Zorica.
engleski
Alternating current electrochemical anodisation of silicon on insulator layers
Porous silicon (PSi) samples were prepared by electrochemical anodisation of silicon on insulator layers. Structural and optical properties of prepared samples were investigated by Raman and photoluminescence (PL) spectroscopy and field emission scanning electron microscopy (FE-SEM). The anodisation of silicon on insulator layers was performed by alternating currents (AC) of the mains frequency of 50 Hz. A very intensive PL was observed at the circular edge of the samples that exhibited micrometer sized island- like porous structure, while the central part of the samples showed moderate PL signal. The formation of such porous island-like structures with strong intensity PL was interpreted with stress induced due to difference of the piezoelectric coefficient of silicon and quartz layers (buried SiO2). Micro-Raman spectra of islands show strong phonon confinement with the cluster size between 1.4 and 3.5 nm.
Alternating current; Field emission scanning electron microscopy; Island-like structures; Micro-Raman spectra; Phonon confinement; Piezoelectric coefficient; Silicon on insulator; Structural and optical properties
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Podaci o prilogu
15-17.
2013.
objavljeno
Podaci o matičnoj publikaciji
MIPRO 2013 36nd International Convention, Proceedings of MEET and GVS conferences
Biljanović, Petar ; Skala, Karolj (ur.)
Rijeka: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO
978-953233076-2
Podaci o skupu
MIPRO 2013
predavanje
20.05.2013-24.05.2013
Opatija, Hrvatska