engleski

Al-Mo thin films prepared by magnetron sputtering

AlxMo100-x 400 nm thin films (x  40  90 in steps of 5 at%) were prepared by magnetron sputtering on glass, alumina and quartz substrate at Ruđer Bošković Institute. As deposited films are amorphous for 45  x  85, and with respect to other Al-refractory metal alloys, Al-Mo films exhibit highest resistivities of the order of 1000 µcm around Al75Mo25 composition. The thermal stability and crystallization of the amorphous samples were investigated by the resistivitiy changes upon the isochronal heating and the results were complemented by GIXRD analysis for selected heating temperatures. Upon crystallization, the resistivity for x = 80, 75, 70 increases, contrary to the expectations, two to three times, and a reproducible exponential term in (T) reminiscent of the „hopping conductivity“ at lower temperatures appears. This „hopping“ term disappears upon heating the samples to higher temperatures. Only grain growth from 5 nm - 10 nm to 10 nm - 15 nm has been detected. Therefore, nanocrystalline Al-Mo thin films may present novel nanostructured materials with as yet unpredicted properties.

nanocrystalline Al-Mo thin films; XRD; resitivity

The paper was presented as a poster by Marija Sorić.