engleski

Influence of ion-beam properties on ordering of quantum dots in amorphous matrices

Ion-beam irradiation of semiconductor/insulator multilayers is found to be an effective method for the production of ordered arrays of quantum dots in amorphous matrices [1, 2]. In the present work we will discuss how the ion beam properties influence the formation and ordering of Ge quantum dots in an amorphous silica matrix. For that purpose Ge+SiO2/SiO2 multilayers were irradiated with two different ion types (O and Si) and several ion energies to investigate the effects of electron and nuclear stopping on the quantum dot arrangement and quality of their ordering. The analysis results show that electron stopping is the most important parameter for the achievement of regular ordering of quantum dots. In addition, by selecting ions with the same electronic stopping but different velocity (O ions with 3 and 15 MeV) we were able to study the influence of the velocity effect on the ordering of quantum dots in semiconductor/insulator multilayers. [1] M. Buljan, I. Bogdanović-Radović, M. Karlušić, U.V. Desnica, G. Dražić, N. Radić, P. Dubček, K. Salamon, S. Bernstorff, V. Holý ; Appl. Phys. Lett. 95, 063104 (2009). [2] M. Buljan, I. Bogdanović-Radović, M. Karlušić, U.V. Desnica, N. Radić, N.Skukan, G. Dražić, M. Ivanda, Z. Matej, V. Valeš, J. Grenzer, T. Cornelius, H. T. Metzger, V. Holý ; Phys. Rev. B 81 085321 (2010).

ion irradiation; quantum dots

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