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Ion beam synthesis of Germanium quantum dots embedded in SiO2: effect of ion beam fluence and annealing temperature


Karlušić, Marko; Bogdanović-Radović, Ivančica; Buljan, Maja; Skukan, Natko; Božičević Mihalić, Iva; Jakšić, Milko; Radić, Nikola; Desnica, Uroš; Salamon, Krešimir; Bernstorff, Sigrid
Ion beam synthesis of Germanium quantum dots embedded in SiO2: effect of ion beam fluence and annealing temperature // Book of Abstracts
Nica, Francuska, 2011. str. PB2-37 (poster, međunarodna recenzija, sažetak, znanstveni)


Naslov
Ion beam synthesis of Germanium quantum dots embedded in SiO2: effect of ion beam fluence and annealing temperature

Autori
Karlušić, Marko ; Bogdanović-Radović, Ivančica ; Buljan, Maja ; Skukan, Natko ; Božičević Mihalić, Iva ; Jakšić, Milko ; Radić, Nikola ; Desnica, Uroš ; Salamon, Krešimir ; Bernstorff, Sigrid

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
Book of Abstracts / - , 2011, PB2-37

Skup
E-MRS 2011 Spring Meeting, Symposium B

Mjesto i datum
Nica, Francuska, 9-13.5.2011

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Ge quantum dots; ion irradiation

Sažetak
In the present work we investigate the structural properties of Ge quantum dots (QDs) that are formed by ion-beam irradiation of a single, 300 nm thick Ge+SiO2 layer deposited on Si substrate. The effects of the ion fluence and annealing temperature on the correlation and size distribution of the QDs are studied using a 3 MeV oxygen ion beam. We show that ion beam irradiation causes a significant homogenization of the QD spacing and a narrowing of their size distribution. The ion fluence is found to be crucial for two QD parameters: size distribution and average value of their mutual distances. Additionally, it is shown that annealing is successfully applied for crystallization of the QDs and removal of the irradiation induced damage. Furthermore, it is demonstrated that the annealing temperature also affects the average size of the QDs.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
035-0352843-2844 - Veza strukturnih i fizikalnih svojstava materijala kontrolirane dimenzionalnosti (Ognjen Milat, )
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Branko Pivac, )
098-0982886-2895 - Novi amorfni i nanostrukturirani tankoslojni materijali (Nikola Radić, )
098-0982886-2897 - Poluvodički materijali za optoelektroniku i nanotehnologiju (Branko Šantić, )
098-1191005-2876 - Procesi interakcije ionskih snopova i nanostrukture (Milko Jakšić, )

Ustanove
Institut za fiziku, Zagreb,
Institut "Ruđer Bošković", Zagreb