engleski

Ion beam synthesis of Germanium quantum dots embedded in SiO2: effect of ion beam fluence and annealing temperature

In the present work we investigate the structural properties of Ge quantum dots (QDs) that are formed by ion-beam irradiation of a single, 300 nm thick Ge+SiO2 layer deposited on Si substrate. The effects of the ion fluence and annealing temperature on the correlation and size distribution of the QDs are studied using a 3 MeV oxygen ion beam. We show that ion beam irradiation causes a significant homogenization of the QD spacing and a narrowing of their size distribution. The ion fluence is found to be crucial for two QD parameters: size distribution and average value of their mutual distances. Additionally, it is shown that annealing is successfully applied for crystallization of the QDs and removal of the irradiation induced damage. Furthermore, it is demonstrated that the annealing temperature also affects the average size of the QDs.

Ge quantum dots; ion irradiation

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