engleski

Examination of Horizontal Current Bipolar Transistor (HCBT) with Double and Single Polysilicon Region

Horizontal Current Bipolar Transistor (HCBT) with implanted n+ collector (single-poly HCBT) has a higher fT and fmax by 50 % and 36 %, respectively, comparing to HCBT with polysilicon n+ collector (double-poly HCBT). The physical mechanisms responsible for the improvement of fT and fmax of single-poly HCBT are examined by the measurements of transistors, test structures and by simulations. Besides the current crowding effect, it is shown that RC dominantly limits fT in double-poly HCBT. The dominant component of RC is identified to be the resistance of the interface oxide between the n+ polysilicon and the n-hill collector regions.

BiCMOS integrated circuits; Bipolar transistors; HF radio communication; Horizontal Current Bipolar Transistor

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