engleski

Doping of epitaxial graphene on Ir(111)

Graphene’s remarkable electronic properties give rise to great expectations of this new material for future electronic devices and spintronic applications. For such purposes a manipulation of its electronic band structure is desired. We have shown that it is possible to engineer the electronic structure of graphene by fine-tuning the Dirac cone of the model system, epitaxial graphene on Ir(111). We had intercalated several different materials, which led to the n-type doping of graphene: Cs, Li, Eu, and their combination. Doping with a specific material leads to different fine effects, such as: (a) gradual or stepwise doping, (b) apparent gap opening at the Dirac point, (c) group velocity changes, etc. We study these effects through direct comparison of the band structure, measured by angle resolved photoemission spectroscopy (ARPES).

graphene; Ir(111); doping

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