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CONTROLING THE GROWTH OF GRAPHENE ON A STEPPED IRIDIUM SURFACE


Iva Šrut, Vesna Mikšić Trontl, Marin Petrović, Ida Delač, Petar Pervan, Marko Kralj
CONTROLING THE GROWTH OF GRAPHENE ON A STEPPED IRIDIUM SURFACE // Programme and book of abstract
Zagreb, 2012. str. 161-161 (poster, međunarodna recenzija, sažetak, ostalo)


Naslov
CONTROLING THE GROWTH OF GRAPHENE ON A STEPPED IRIDIUM SURFACE

Autori
Iva Šrut, Vesna Mikšić Trontl, Marin Petrović, Ida Delač, Petar Pervan, Marko Kralj

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, ostalo

Izvornik
Programme and book of abstract / - Zagreb, 2012, 161-161

ISBN
978-953-98154-1-5

Skup
14th Joint Vacuum Conference, 12th European Vacuum Conference, 11th Annual meeting of the German vacuum society, 19th Coratian-Slovenian vacuum meething

Mjesto i datum
Dubrovnik, hrvatska, 4.-8.06.2012

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Graphene; vicinal surfaces

Sažetak
Graphene, the one atom thick hexagonal array of carbon atoms, is considered to be a promising material for use in electronic devices. However, the fact that it is a zero gap semiconductor limits its utilization in novel transistors. Therefore, a great deal of effort has been put into finding different ways to alter graphene electronic structure and possibly open a gap. We investigate a growth on a periodically stepped surface, whose 1D potential could lead to unexpected and potentially useful charge carrier behavior, e.g. gap openings or Fermi velocity anisotropy [1]. We have grown graphene on an Ir(332) surface by processes of temperature controlled growth (TPG) and chemical vapor deposition (CVD) with varying sample temperature and ethylene pressure. The surface has been characterized by scanning tunneling microscopy (STM). We find that graphene growth alters uniformity of a clean (332) surface, forming broader terraces with several different moiré structures, followed by a series of narrow steps. Our results show that the width of these new formed terraces can be controlled by changing the sample temperature during CVD. In this way we open path to grow periodically modulated graphene with specifically altered electronic structure. [1] C.-H. Park, L. Yang, Y.-W. Son, M. L. Cohen, S. G. Louie , Nature Phys. 4 (2008) 213

Izvorni jezik
Engleski

Znanstvena područja
Fizika



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