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Pregled bibliografske jedinice broj: 641957

Some physical problems in preparation and analysis of heavily boron and phosphorus doped polysilicon thin films


Očko, Miroslav; Žonja, Sanja; Ivanda, Mile
Some physical problems in preparation and analysis of heavily boron and phosphorus doped polysilicon thin films // Proceedings of MIPRO 2013, 36st international convention on information and communication technology, elecronics and microelectronics, May 20-24, 2013 / Biljanović, Petar ; Skala, Karolj (ed) (ur.).
Opatija, Croatia, 2013. str. 27-32 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


Naslov
Some physical problems in preparation and analysis of heavily boron and phosphorus doped polysilicon thin films

Autori
Očko, Miroslav ; Žonja, Sanja ; Ivanda, Mile

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of MIPRO 2013, 36st international convention on information and communication technology, elecronics and microelectronics, May 20-24, 2013 / Biljanović, Petar ; Skala, Karolj (ed) - Opatija, Croatia, 2013, 27-32

Skup
MIPRO 2013, 36st international convention on information and communication technology, elecronics and microelectronics, May 20-24, 2013

Mjesto i datum
Opatija, Hrvatska, May 20-24, 2013

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Si:B; Si:P; preparation

Sažetak
We discuss problems in the preparation and analysis of the solid solution phase in the case of heavily phosphorus and boron doped polycrystalline silicon. Some currently used methods and the technology of polysilicon thin films preparation are presented. Based on and afore these discussions, we propose a process of preparation of a good quality heavily boron and phosphorus doped silicon thin film samples. The characterisation, with some new methods of characterisations, and the investigation of the stability of such obtained samples are presented. It was also indicated that the problem of the determination of the current carrier concentration is not yet solved even in the heavily doped, metallic, regime in polysilicon.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA


Projekt / tema
035-0352827-2841 - Materijali sa elektronskom strukturom modeliranom modernim tehnikama priprave (Ivica Aviani, )
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Marko Koričić, )
098-0982904-2898 - Fizika i primjena nanostruktura i volumne tvari (Mile Ivanda, )

Ustanove
Fakultet elektrotehnike i računarstva, Zagreb,
Institut "Ruđer Bošković", Zagreb