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Pregled bibliografske jedinice broj: 629228

Growth of a three-dimensional anisotropic lattice of Ge quantum dots in an amorphous alumina matrix


Buljan, Maja; Roshchupkina, Olga; Šantić, Ana; Holy, Vaclav; Baehtz, Carsten; Muecklich, Arndt; Horak, Lukaš; Valeš, Vaclav; Radić, Nikola; Bernstorff, Sigrid; Grenzer, Joerg
Growth of a three-dimensional anisotropic lattice of Ge quantum dots in an amorphous alumina matrix // Journal of applied crystallography, 46 (2013), 709-715 doi:10.1107/S0021889813008182 (međunarodna recenzija, članak, znanstveni)


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Naslov
Growth of a three-dimensional anisotropic lattice of Ge quantum dots in an amorphous alumina matrix

Autori
Buljan, Maja ; Roshchupkina, Olga ; Šantić, Ana ; Holy, Vaclav ; Baehtz, Carsten ; Muecklich, Arndt ; Horak, Lukaš ; Valeš, Vaclav ; Radić, Nikola ; Bernstorff, Sigrid ; Grenzer, Joerg

Izvornik
Journal of applied crystallography (0021-8898) 46 (2013); 709-715

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Ge quantum dots ; self-assembly ; conductivity ; anisotropy ; magnetron sputtering ; synthesis.

Sažetak
Simple processes for the preparation of semiconductor quantum dot lattices embedded in dielectric amorphous matrices play an important role in various nanotechnology applications. Of particular interest are quantum dot lattices with properties that differ significantly in different directions parallel to the material surface. Here, a simple method is demonstrated for the fabrication of an anisotropic lattice of Ge quantum dots in an amorphous Al2O3 matrix by a self-assembly process. A specific deposition geometry with an oblique incidence of the Ge and Al2O3 adparticles was used during magnetron sputtering deposition to achieve the desired anisotropy. The observed Ge quantum dot ordering is explained by a combination of directional diffusion of adparticles from the Ge and Al2O3 targets and a shadowing process which occurs during deposition as a result of the specific surface morphology. The prepared material shows a strong anisotropy of the electrical conductivity in different directions parallel to the sample surface.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekti:
MZOS-098-0982886-2859 - Sinergija nanofaza i nanokompozita (Mičetić, Maja, MZOS ) ( POIROT)
MZOS-098-0982886-2895 - Novi amorfni i nanostrukturirani tankoslojni materijali (Radić, Nikola, MZOS ) ( POIROT)
MZOS-098-0982929-2916 - Utjecaj strukture na električna svojstva (bioaktivnih) stakala i keramike (Moguš-Milanković, Andrea, MZOS ) ( POIROT)

Ustanove:
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Nikola Radić (autor)

Avatar Url Maja Mičetić (autor)

Avatar Url Ana Šantić (autor)

Poveznice na cjeloviti tekst rada:

doi scripts.iucr.org

Citiraj ovu publikaciju:

Buljan, Maja; Roshchupkina, Olga; Šantić, Ana; Holy, Vaclav; Baehtz, Carsten; Muecklich, Arndt; Horak, Lukaš; Valeš, Vaclav; Radić, Nikola; Bernstorff, Sigrid; Grenzer, Joerg
Growth of a three-dimensional anisotropic lattice of Ge quantum dots in an amorphous alumina matrix // Journal of applied crystallography, 46 (2013), 709-715 doi:10.1107/S0021889813008182 (međunarodna recenzija, članak, znanstveni)
Buljan, M., Roshchupkina, O., Šantić, A., Holy, V., Baehtz, C., Muecklich, A., Horak, L., Valeš, V., Radić, N., Bernstorff, S. & Grenzer, J. (2013) Growth of a three-dimensional anisotropic lattice of Ge quantum dots in an amorphous alumina matrix. Journal of applied crystallography, 46, 709-715 doi:10.1107/S0021889813008182.
@article{article, author = {Buljan, Maja and Roshchupkina, Olga and \v{S}anti\'{c}, Ana and Holy, Vaclav and Baehtz, Carsten and Muecklich, Arndt and Horak, Luka\v{s} and Vale\v{s}, Vaclav and Radi\'{c}, Nikola and Bernstorff, Sigrid and Grenzer, Joerg}, year = {2013}, pages = {709-715}, DOI = {10.1107/S0021889813008182}, keywords = {Ge quantum dots, self-assembly, conductivity, anisotropy, magnetron sputtering, synthesis.}, journal = {Journal of applied crystallography}, doi = {10.1107/S0021889813008182}, volume = {46}, issn = {0021-8898}, title = {Growth of a three-dimensional anisotropic lattice of Ge quantum dots in an amorphous alumina matrix}, keyword = {Ge quantum dots, self-assembly, conductivity, anisotropy, magnetron sputtering, synthesis.} }
@article{article, author = {Buljan, Maja and Roshchupkina, Olga and \v{S}anti\'{c}, Ana and Holy, Vaclav and Baehtz, Carsten and Muecklich, Arndt and Horak, Luka\v{s} and Vale\v{s}, Vaclav and Radi\'{c}, Nikola and Bernstorff, Sigrid and Grenzer, Joerg}, year = {2013}, pages = {709-715}, DOI = {10.1107/S0021889813008182}, keywords = {Ge quantum dots, self-assembly, conductivity, anisotropy, magnetron sputtering, synthesis.}, journal = {Journal of applied crystallography}, doi = {10.1107/S0021889813008182}, volume = {46}, issn = {0021-8898}, title = {Growth of a three-dimensional anisotropic lattice of Ge quantum dots in an amorphous alumina matrix}, keyword = {Ge quantum dots, self-assembly, conductivity, anisotropy, magnetron sputtering, synthesis.} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


Citati:





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