engleski

Estimation of Insulated-gate Bipolar Transistor Operating Temperature: Simulation and Experiment

Knowledge of a power semiconductor’s operating temperature is important in circuit design and also converter control. Designing appropriate circuitry for virtual junction temperature measurement under real operating conditions that do not affect regular circuit operation is a demanding task for engineers. The proposed method enables a virtual junction temperature estimation based on the real-time measurement of a semiconductor’s quasi-threshold voltage using a dedicated modified gate driver circuit. Before the real circuit was realised, a simulation was conducted to verify the concept and to obtain the basic properties and potential drawbacks of the proposed method.

IGBT; operating temperature measurement; threshold voltage; temperature sensitive electrical parameter

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