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Dual threshold diode based on the superconductor-to- insulator transition in ultrathin TiN films

We investigate transport properties of superconducting TiN films in the vicinity of the superconductor-insulator transition (SIT). We show that the current - voltage (I - V) characteristics are mirror-symmetric with respect to the SIT and can be switched to each other by the applied magnetic field. In both superconducting and insulating states the low-temperature I - V characteristics have pronounced diode-like threshold character, demonstrating voltage/current jumps over several orders of magnitude at the corresponding critical current or threshold voltage. We have found that for both states the theory developed for Josephson junction arrays offers a quantitative description of the experimental results.

superconductor-insulator transition; low-Tc superconducting thin films; Josephson devices; Superconducting device characterization; design; and modeling

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