engleski

Ge Quantum Dots in Alumina Multilayers: Self- Assembly for Advanced Properties

We report on a method for the production of materials consisting of regularly ordered Ge quantum dots in amorphous alumina matrix, with advanced properties. The regular ordering is induced by self-assembled growth during the magnetron sputtering deposition of a (Ge+Al2O3)/Al2O3 multilayer. The formation and regular ordering of quantum dots is achieved already at room temperature. The distances between the quantum dots and their sizes can be tuned by the deposition temperature, while the annealing temperature controls the quantum dots crystalline structure. The produced materials have a high spatial density of quantum dots with narrow size distribution, and they show a size-dependent photoluminescence in the visible light range. The structure of the materials is shown to be highly resistive to ion-beam irradiation for a large range of irradiation parameters. We compare the self-assembled quantum dots formed in alumina and silica matrices, and we show that the Ge quantum dots in alumina are superior to Ge dots in silica concerning the degree of ordering, facile production and resistivity to ion-beam irradiation.

Ge quantum dots; amorphous alumina; self-assembly; multilayers; magnetron sputtering; ion beam irradiation

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