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Relaxation-crystallization processes in Al-TE binary amorphous thin films

Structural relaxation and crystallization of Al-TE amorphous thin films under isochronal and isothermal condition was examined by continuous in situ electrical resistance measurements in vacuum. The amorphous Al-TE thin films were prepared by simultaneous sputtering from two independently controlled DC magnetron sources. For the isochronal heating, it was observed that the relaxation effects decreased with an increase of the heating rate and decreased with the content of early transition metal in the film. Assuming the linear dependence of resistivity with temperature (R/RRT ~ α*ΔT) in the observed temperature interval, the relaxation effects were extracted from the R(T) dependence. Adaptations of the JMA model to non-isothermal kinetics were used to explain the relaxation behavior. The application of the models suggests that the resistivity is influenced by competition of two effects inside the film: changing from amorphous to crystalline structure and forming of grain boundaries.

Al-TE amorphous alloys; thin films; relaxation; crystallization

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