Napredna pretraga

Pregled bibliografske jedinice broj: 605270

Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method


Ristić, Davor; Ivanda, Mile; Furić, Kresimir; Chiasera, Alessandro; Moser, Enrico; Ferrari, Maurizio
Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method // Croatica chemica acta, 85 (2012), 1; 91-96 doi:10.5562/cca1969 (međunarodna recenzija, članak, znanstveni)


Naslov
Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method

Autori
Ristić, Davor ; Ivanda, Mile ; Furić, Kresimir ; Chiasera, Alessandro ; Moser, Enrico ; Ferrari, Maurizio

Izvornik
Croatica chemica acta (0011-1643) 85 (2012), 1; 91-96

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
LPCVD; silicon; thermal decomposition; thin films

Sažetak
Silicon-rich oxide (SiOx, 0 < x < 2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570 °C using silane (SiH4) and oxygen as the reactant gasses. The films were annealed at temperatures of 800, 900, 1000, and 1100 °C to induce the separation of excess silicon in the SiOx films into nanosized crystalline silicon particles inside an amorphous SiOx matrix. The size of the silicon particles was determined using Raman spectroscopy.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
098-0982904-2898 - Fizika i primjena nanostruktura i volumne tvari (Mile Ivanda, )

Ustanove
Institut "Ruđer Bošković", Zagreb

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


Citati