engleski

Influence of edge defects, vacancies and potential fluctuations on transport properties of extremely-scaled graphene nanoribbons

Atomistic quantum transport simulations of a large ensemble of devices are employed to investigate the impact of different sources of disorder on transport properties of extremely-scaled (length of 10 nm, width of 1–4 nm) graphene nanoribbons. We report the dependence of transport gap, ON- and OFF-state conductance, and ON-OFF ratio on edge-defect density, vacancy density and potential fluctuation amplitude. For the smallest devices and realistic lattice defect densities, transport gap increases by up to ~300%, and ON-OFF ratio reaches almost ~10^6. We also report a rather high variation of transport gap and ON-OFF ratio. In contrast, we find that the potential fluctuations have a negligible impact on the transport gap and cause a relatively modest increase of the ON-OFF ratio.

graphene nanoribbons; NEGF simulation; edge defects; vacancies; potential fluctuations; transport gap

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