engleski

Optimization of diode capacitance of Annular BS detector

Two dimensional simulations of semiconductor p-i-n photodetectors are carried out with the main goal of reducing the junction capacitance in order to optimize device response time. The design of junction periphery is examined optimizing the distance between the active p-region and the n+ guard ring. Additionally, the insertion of new p-regions in the n-depletion region is studied and the optimum doping profiles of such regions are determined.

solid state detectors; photodetectors; semiconductor technology; amorphous boron

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