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Pregled bibliografske jedinice broj: 590878

On the application of boron and phosphorus heavily doped LPCVD polycrystalline silicon thin films as thermoelectric materials


Žonja, Sanja; Očko, Miroslav; Ivanda, Mile; Suligoj, Tomislav; Biljanović, Petar
On the application of boron and phosphorus heavily doped LPCVD polycrystalline silicon thin films as thermoelectric materials // MIPRO 2012, 35th Jubilee International Convention on Information and Communication Technology, Electronics and Microelectronics
Opatija, Hrvatska, 2012. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


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Naslov
On the application of boron and phosphorus heavily doped LPCVD polycrystalline silicon thin films as thermoelectric materials

Autori
Žonja, Sanja ; Očko, Miroslav ; Ivanda, Mile ; Suligoj, Tomislav ; Biljanović, Petar

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Skup
MIPRO 2012, 35th Jubilee International Convention on Information and Communication Technology, Electronics and Microelectronics

Mjesto i datum
Opatija, Hrvatska, 21-25.05.2012

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
heavily doped polycrystalline silicon; boron; phosphorus; thermoelectric; nanostructuring; low temperature measurements; thermopower; carrier concentration

Sažetak
Even in the metallic regime, heavily doped polycrystalline silicon has high thermopower, but since recently, due its high resistivity combined with high thermal conductivity, silicon was not considered as a possible thermoelectric material. However, various reasons have encouraged investigations on polycrystalline silicon in order to enhance its TE properties. We discuss these reasons and give a short overview of the most promising results and works done in the field. We also present our incipient work on the LPCVD obtained polysilicon thin films annealed in various ways. The main important result we obtained so far is the high thermopower of a Si:B sample: +200 μV/K at room temperature ; much higher than predicted for the common metals and the same as of Bi<sub>2</sub>Te<sub>3</sub>, the only thermoelectric material commercially used nowadays.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Elektrotehnika



POVEZANOST RADA


Projekt / tema
035-0352827-2841 - Materijali sa elektronskom strukturom modeliranom modernim tehnikama priprave (Aviani, Ivica, MZOS - )
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZOS - )
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZOS - )
098-0982904-2898 - Fizika i primjena nanostruktura i volumne tvari (Ivanda, Mile, MZOS - )

Ustanove
Institut za fiziku, Zagreb,
Fakultet elektrotehnike i računarstva, Zagreb,
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Sanja Žonja (autor)

Avatar Url Petar Biljanović (autor)

Avatar Url Miroslav Očko (autor)

Avatar Url Tomislav Suligoj (autor)

Avatar Url Mile Ivanda (autor)

Citiraj ovu publikaciju

Žonja, Sanja; Očko, Miroslav; Ivanda, Mile; Suligoj, Tomislav; Biljanović, Petar
On the application of boron and phosphorus heavily doped LPCVD polycrystalline silicon thin films as thermoelectric materials // MIPRO 2012, 35th Jubilee International Convention on Information and Communication Technology, Electronics and Microelectronics
Opatija, Hrvatska, 2012. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Žonja, S., Očko, M., Ivanda, M., Suligoj, T. & Biljanović, P. (2012) On the application of boron and phosphorus heavily doped LPCVD polycrystalline silicon thin films as thermoelectric materials. U: MIPRO 2012, 35th Jubilee International Convention on Information and Communication Technology, Electronics and Microelectronics.
@article{article, year = {2012}, keywords = {heavily doped polycrystalline silicon, boron, phosphorus, thermoelectric, nanostructuring, low temperature measurements, thermopower, carrier concentration}, title = {On the application of boron and phosphorus heavily doped LPCVD polycrystalline silicon thin films as thermoelectric materials}, keyword = {heavily doped polycrystalline silicon, boron, phosphorus, thermoelectric, nanostructuring, low temperature measurements, thermopower, carrier concentration}, publisherplace = {Opatija, Hrvatska} }




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