Napredna pretraga

Pregled bibliografske jedinice broj: 590877

Role of the substrate and the temperature of deposition on the properties of the Ta<sub>x</sub>N thin films


Očko, Miroslav; Žonja, Sanja; Ivanda, Mile
Role of the substrate and the temperature of deposition on the properties of the TaxN thin films // MIPRO 2012, 35th Jubilee International Convention on Information and Communication Technology, Electronics and Microelectronics
Opatija, Hrvatska, 2012. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


Naslov
Role of the substrate and the temperature of deposition on the properties of the Ta<sub>x</sub>N thin films

Autori
Očko, Miroslav ; Žonja, Sanja ; Ivanda, Mile

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Skup
MIPRO 2012, 35th Jubilee International Convention on Information and Communication Technology, Electronics and Microelectronics

Mjesto i datum
Opatija, Hrvatska, 21-25.05.2012

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Ta<sub>x</sub>N; substrate; sapphire; SiO<sub>2</sub>; Raman spectroscopy; resistivity

Sažetak
We present an interim report on the investigations of the Ta<sub>x</sub>N thin films deposited on the (100) Si wafers coated with a 140-nm thermal SiO<sub>2</sub> layer. Our conclusions are based on the room temperature sheet resistance measurements, transport properties measurements from helium up to room temperature and on the Raman spectra analysis of the investigated series. In particular, we discuss a nonmonotonous concentration dependence of transport properties. This behaviour we attribute to a local minimum in the density of electronic states at the Fermi level calculated for the intermetallic Ta<sub>4</sub>N<sub>5</sub> [1]. Such behaviour was not observed in other investigations on the transport properties of TaxN found in literature. Also our Raman spectra show some differences compared to other Raman investigations on Ta<sub>x</sub>N. We ascribe these and other differences discussed to the substrate properties which were used in the preparation of these thin films. The overall properties of the Ta<sub>x</sub>N deposited on the oxidized Si wafers are compared to the properties of the Ta<sub>x</sub>N thin films deposited on sapphire.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Elektrotehnika



POVEZANOST RADA


Projekt / tema
035-0352827-2841 - Materijali sa elektronskom strukturom modeliranom modernim tehnikama priprave (Ivica Aviani, )
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Marko Koričić, )
098-0982904-2898 - Fizika i primjena nanostruktura i volumne tvari (Mile Ivanda, )

Ustanove
Institut za fiziku, Zagreb,
Fakultet elektrotehnike i računarstva, Zagreb,
Institut "Ruđer Bošković", Zagreb