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Pregled bibliografske jedinice broj: 589658

Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions


Pinto, Sara R.C.; Buljan, Maja; Chahboun, Adil; Roldan, M.A.; Bernstorff, Sigrid; Varela, M.; Pennycook, S.J.; Barradas, N.P.; Alves, E.; Molina, S.I. et al.
Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions // Journal of applied physics, 111 (2012), 074316-1 doi:10.1063/1.3702776 (međunarodna recenzija, članak, znanstveni)


CROSBI ID: 589658 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions

Autori
Pinto, Sara R.C. ; Buljan, Maja ; Chahboun, Adil ; Roldan, M.A. ; Bernstorff, Sigrid ; Varela, M. ; Pennycook, S.J. ; Barradas, N.P. ; Alves, E. ; Molina, S.I. ; Ramos, M.M.D. ; Gomes, M.J.M.

Izvornik
Journal of applied physics (0021-8979) 111 (2012); 074316-1

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Ge quantum dots; self-assembly; GISAXS; amorphous silica

Sažetak
In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (GeþSiO2)/SiO2 multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (GeþSiO2) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekti:
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Pivac, Branko, MZOS ) ( POIROT)

Ustanove:
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Maja Mičetić (autor)

Poveznice na cjeloviti tekst rada:

doi jap.aip.org dx.doi.org

Citiraj ovu publikaciju:

Pinto, Sara R.C.; Buljan, Maja; Chahboun, Adil; Roldan, M.A.; Bernstorff, Sigrid; Varela, M.; Pennycook, S.J.; Barradas, N.P.; Alves, E.; Molina, S.I. et al.
Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions // Journal of applied physics, 111 (2012), 074316-1 doi:10.1063/1.3702776 (međunarodna recenzija, članak, znanstveni)
Pinto, S., Buljan, M., Chahboun, A., Roldan, M., Bernstorff, S., Varela, M., Pennycook, S., Barradas, N., Alves, E. & Molina, S. (2012) Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions. Journal of applied physics, 111, 074316-1 doi:10.1063/1.3702776.
@article{article, author = {Pinto, Sara R.C. and Buljan, Maja and Chahboun, Adil and Roldan, M.A. and Bernstorff, Sigrid and Varela, M. and Pennycook, S.J. and Barradas, N.P. and Alves, E. and Molina, S.I. and Ramos, M.M.D. and Gomes, M.J.M.}, year = {2012}, pages = {074316-1-074316-6}, DOI = {10.1063/1.3702776}, keywords = {Ge quantum dots, self-assembly, GISAXS, amorphous silica}, journal = {Journal of applied physics}, doi = {10.1063/1.3702776}, volume = {111}, issn = {0021-8979}, title = {Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions}, keyword = {Ge quantum dots, self-assembly, GISAXS, amorphous silica} }
@article{article, author = {Pinto, Sara R.C. and Buljan, Maja and Chahboun, Adil and Roldan, M.A. and Bernstorff, Sigrid and Varela, M. and Pennycook, S.J. and Barradas, N.P. and Alves, E. and Molina, S.I. and Ramos, M.M.D. and Gomes, M.J.M.}, year = {2012}, pages = {074316-1-074316-6}, DOI = {10.1063/1.3702776}, keywords = {Ge quantum dots, self-assembly, GISAXS, amorphous silica}, journal = {Journal of applied physics}, doi = {10.1063/1.3702776}, volume = {111}, issn = {0021-8979}, title = {Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions}, keyword = {Ge quantum dots, self-assembly, GISAXS, amorphous silica} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


Citati:





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