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Pregled bibliografske jedinice broj: 582512

Structural and electrical studies of ultrathin layers with Si0.7Ge0.3 nanocrystals confined in a SiGe/SiO2 superlattice


Vieira, E.M.F.; ...; Buljan, Maja; Capan, Ivana; ...; Gomes, M.J.M.
Structural and electrical studies of ultrathin layers with Si0.7Ge0.3 nanocrystals confined in a SiGe/SiO2 superlattice // Journal of applied physics, 111 (2012), 10; 104323-1 doi:10.1063/1.4722278 (međunarodna recenzija, članak, znanstveni)


Naslov
Structural and electrical studies of ultrathin layers with Si0.7Ge0.3 nanocrystals confined in a SiGe/SiO2 superlattice

Autori
Vieira, E.M.F. ; ... ; Buljan, Maja ; Capan, Ivana ; ... ; Gomes, M.J.M.

Izvornik
Journal of applied physics (0021-8979) 111 (2012), 10; 104323-1

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Annealing; Ge-Si alloys; MOS capacitors; multilayers; nanofabrication; nanostructured materials; Raman spectra; Rutherford backscattering; semiconductor growth; semiconductor superlattices; semiconductor thin films; silicon compounds; transmission electron microscopy; X-ray diffraction; X-ray scattering

Sažetak
In this work, SiGe/SiO2 multi-layer (ML) films with layer thickness in the range of a few nanometers were successfully fabricated by conventional RF-magnetron sputtering at 350 °C. The influence of the annealing treatment on SiGe nanocrystals (NCs) formation and crystalline properties were investigated by Raman spectroscopy and grazing incidence x-ray diffraction. At the annealing temperature of 800 °C, where well defined SiGe NCs were observed, a thorough structural investigation of the whole ML structure has been undertaken by Rutherford backscattering spectroscopy, grazing incidence small angle x-ray scattering, high resolution transmission electron microscopy, and annular dark field scanning transmission electron microscopy. Our results show that the onset of local modifications to the ML composition takes place at this temperature for annealing times of the order of a few tens of minutes with the formation of defective regions in the upper portion of the ML structure. Only the very first layers over the Si substrate appear immune to this problem. This finding has been exploited for the fabrication of a defect free metal-oxide-semiconductor structure with a well-defined single layer of SiGe NCs. A memory effect attributed to the presence of the SiGe NCs has been demonstrated by high frequency capacitance-voltage measurements.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Branko Pivac, )

Ustanove
Institut "Ruđer Bošković", Zagreb

Autor s matičnim brojem:
Maja Buljan, (242416)
Ivana Capan, (239373)

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


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