Nalazite se na CroRIS probnoj okolini. Ovdje evidentirani podaci neće biti pohranjeni u Informacijskom sustavu znanosti RH. Ako je ovo greška, CroRIS produkcijskoj okolini moguće je pristupi putem poveznice www.croris.hr
izvor podataka: crosbi

Structural and electrical studies of ultrathin layers with Si0.7Ge0.3 nanocrystals confined in a SiGe/SiO2 superlattice (CROSBI ID 184430)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Vieira, E.M.F. ; ... ; Buljan, Maja ; Capan, Ivana ; ... ; Gomes, M.J.M. Structural and electrical studies of ultrathin layers with Si0.7Ge0.3 nanocrystals confined in a SiGe/SiO2 superlattice // Journal of applied physics, 111 (2012), 10; 104323-1-104323-9. doi: 10.1063/1.4722278

Podaci o odgovornosti

Vieira, E.M.F. ; ... ; Buljan, Maja ; Capan, Ivana ; ... ; Gomes, M.J.M.

engleski

Structural and electrical studies of ultrathin layers with Si0.7Ge0.3 nanocrystals confined in a SiGe/SiO2 superlattice

In this work, SiGe/SiO2 multi-layer (ML) films with layer thickness in the range of a few nanometers were successfully fabricated by conventional RF-magnetron sputtering at 350 °C. The influence of the annealing treatment on SiGe nanocrystals (NCs) formation and crystalline properties were investigated by Raman spectroscopy and grazing incidence x-ray diffraction. At the annealing temperature of 800 °C, where well defined SiGe NCs were observed, a thorough structural investigation of the whole ML structure has been undertaken by Rutherford backscattering spectroscopy, grazing incidence small angle x-ray scattering, high resolution transmission electron microscopy, and annular dark field scanning transmission electron microscopy. Our results show that the onset of local modifications to the ML composition takes place at this temperature for annealing times of the order of a few tens of minutes with the formation of defective regions in the upper portion of the ML structure. Only the very first layers over the Si substrate appear immune to this problem. This finding has been exploited for the fabrication of a defect free metal-oxide-semiconductor structure with a well-defined single layer of SiGe NCs. A memory effect attributed to the presence of the SiGe NCs has been demonstrated by high frequency capacitance-voltage measurements.

annealing; Ge-Si alloys; MOS capacitors; multilayers; nanofabrication; nanostructured materials; Raman spectra; Rutherford backscattering; semiconductor growth; semiconductor superlattices; semiconductor thin films; silicon compounds; transmission electron microscopy; X-ray diffraction; X-ray scattering

nije evidentirano

nije evidentirano

nije evidentirano

nije evidentirano

nije evidentirano

nije evidentirano

Podaci o izdanju

111 (10)

2012.

104323-1-104323-9

objavljeno

0021-8979

10.1063/1.4722278

Povezanost rada

Fizika

Poveznice
Indeksiranost