engleski

Important Properties of Transient Thermal Impedance for MOS-Gated Power Semiconductors

Important properties of transient thermal impedance (TTI) for MOS-gated power semiconductors are investigated on the base of measurement results. Electrical method of transient thermal impedance measurement was used with different temperature sensitive electrical parameters (TSEPs). A wide variety of measurements on MOSFET and IGBT samples was performed, to be able to answer on the questions about TTI existance conditions. Different types of temperature responses were used , as well as different power dissipation levels and conditions. Final TEMPFET test, with simulation and measurement of overtemperature protection reaction time, shows that TTI of MOS-gated components, if properly measured, can be successfully used for simulative estimation of semiconductor's operating temperature.

transient thermal impedance; TEMPFET; temperature sensitive electrical parameter

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