engleski

A Temperature-dependent Power MOSFET Model

A model of power MOSFET with temperature dependent parameters was developed. Chanell charge carrier mobility, drift area resistance and threshold voltage were the temperature dependent parameters selected. This temperature dependent MOSFET model is based on catalogue data. Accordingly, the model was tested first by simulating catalogue characteristics. By using a developed model, a designer of electronic circuits, especially electronic power converters, can obtain very precise information about the dependence of a MOSFET's voltage-current stresses on virtual temperature. Moreover, coupled with a thermal model of MOSFET, this temperature dependent model can be simultaneously used to calculate the time course of voltage, current, power loss and virtual junction temperature.

temperature dependent model; power MOSFET; virtual junction temperature

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