C–V and DLTS studies of radiation induced Si–SiO2 interface defects (CROSBI ID 184244)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Capan, Ivana ; Janicki, Vesna ; Jaćimović, Radojko ; Pivac, Branko
engleski
C–V and DLTS studies of radiation induced Si–SiO2 interface defects
Interface traps at the Si–SiO2 interface have been and will be an important performance limit in many (future) semiconductor devices. In this paper, we present a study of fast neutron radiation induced changes in the density of Si–SiO2 interface-related defects. Interface related defects (Pb centers) are detected before and upon the irradiation. The density of interface-related defects is increasing with the fast neutron fluence.
interface ; radiation ; defects ; C–V ; DLTS
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Podaci o izdanju
282 (1)
2012.
59-62
objavljeno
0168-583X
1872-9584
10.1016/j.nimb.2011.08.065