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Pregled bibliografske jedinice broj: 552763

Surface characterisation of thin silicon rich oxide thin films


Ristić, Davor; Holý, Vaclav; Ivanda, Mile; Marciuš, Marijan; Buljan, Maja; Gamulin, Ozren; Furić, Kresimir; Ristić, Mira; Musić, Svetozar; Mazzola, Maurizio et al.
Surface characterisation of thin silicon rich oxide thin films // EUCMOS 2010 - 30th European Congress on Molecular Spectroscopy with GISR 2010 / Book of Abstracts / Becucci, Maurizio ; Gellini, Cristina ; Schettino, Vincenzo (ur.).
Firenca, 2010. str. 197-197 (poster, međunarodna recenzija, sažetak, znanstveni)


Naslov
Surface characterisation of thin silicon rich oxide thin films

Autori
Ristić, Davor ; Holý, Vaclav ; Ivanda, Mile ; Marciuš, Marijan ; Buljan, Maja ; Gamulin, Ozren ; Furić, Kresimir ; Ristić, Mira ; Musić, Svetozar ; Mazzola, Maurizio ; Chiasera, Alessandro ; Ferrari, Maurizio ; Righini, Giancarlo Cesare.

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
EUCMOS 2010 - 30th European Congress on Molecular Spectroscopy with GISR 2010 / Book of Abstracts / Becucci, Maurizio ; Gellini, Cristina ; Schettino, Vincenzo - Firenca, 2010, 197-197

Skup
EUCMOS 2010 - 30th European Congress on Molecular Spectroscopy

Mjesto i datum
Firenca, Italija, 29.08.-03.09.2010

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Silicon-rich oxide; Low pressure chemical vapour deposition; Scanning electron microscopy; X-ray reflectivity

Sažetak
The silicon rich oxide (SiOx) films were deposited using the LPCVD (Low Pressure Chemical Vapour Deposition) method by thermal oxidation of silane in an oxygen atmosphere at the temperature of 570oC. The films were deposited on silicon (111) substrates. The flows of oxygen and silane in the horizontal tube reactor were varied in order to deposit films with different values of oxygen content x. The deposition temperature of 570oC was chosen in order to obtain highly homogeneous thin films. The roughness of the film surfaces and of the substrate-film interfaces were determined by X-Ray specular reflection. The films were found to have a very homogeneous surface. Scanning electron microscopy was used to study the surface morphology of the thin films. Infrared absorption measurements of the thin films were made, and they showed the absence of the broad band at 1260 cm-1 in the infrared spectra, which is an indication of low surface roughness. Raman spectroscopy was used to determine the structure of the deposited films. The measured Raman spectra showed broad bands typical of the Raman spectra of amorphous materials.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Kemija



POVEZANOST RADA


Projekt / tema
098-0982904-2898 - Fizika i primjena nanostruktura i volumne tvari (Mile Ivanda, )

Ustanove
Institut "Ruđer Bošković", Zagreb