Series Resistance Optimization of High-Sensitivity Si-based VUV Photodiodes (CROSBI ID 580963)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Shi, L. ; Nanver, Lis K. ; Šakić, Agata ; Nihtianov, Stoyan N. ; Knežević, Tihomir ; Gottwald, Alexander ; Kroth, Udo
engleski
Series Resistance Optimization of High-Sensitivity Si-based VUV Photodiodes
Recently, silicon ultrashallow p+n photodiodes, fabricated by a pure boron deposition technology (B-layer diodes), were evaluated for detection in the Vacuum Ultra-Violet (VUV) spectral range from 115 nm to 215 nm wavelengths, where the attenuation length in silicon is only a few nanometers. Superior sensitivity in the order of 0.1 A/W in the whole VUV spectral range was reported [1]. Next to the sensitivity, another important parameter of any photodetector is the response time, which is directly related to its series resistance. In this work a study of the relation between the sensitivity and the series resistance of the B-diodes is presented, supported by simulation results and optical/electrical experimental results. Moreover, practical methods for designing a high sensitivity VUV photodiodes while keeping a relatively low series resistance, are proposed. The experimental results demonstrate that by modifying the diode structure, the series resistance can be effectively reduced. At the same time, the B-layer diodes still maintain a high VUV sensitivity.
Responsivity; Series resistances; Time constants; Ultra shallow junction; Vacuum Ultra-Violet
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Podaci o prilogu
1-4.
2011.
objavljeno
Podaci o matičnoj publikaciji
IEEE Instrumentation and Measurement Technology Conference
Binjiang: Institute of Electrical and Electronics Engineers (IEEE)
978-142447935-1
Podaci o skupu
IEEE International Instrumentation and Measurement Technology Conference
predavanje
10.05.2011-12.05.2011
Hangzhou, Kina