Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection (CROSBI ID 580954)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Šakić, Agata ; Nanver, Lis K. ; Van Veen, Gerard ; Kooijman, Kees ; Vogelsang, Patrick ; Scholtes, T. L. M. ; De Boer, W. B. ; Wien, W. ; Milosavljević, Silvana ; Heerkens, C. T. H. ; Knežević, Tihomir ; Spee, I.
engleski
Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection
A new silicon electron detector technology for Scanning Electron Microscopy, based on ultrashallow p+n boron-layer photodiodes, features nm-thin anodes enabling low-energy electron detection with record-high sensitivity down to 200 eV. Designs with segmented, closely-packed photodiodes and through-wafer apertures allow flexible configurations for optimal material and/or topographical contrasts. A high scanning speed is obtained by growing a well-controlled, lightly-doped, tens-of-microns-thick epi-layer for low capacitance, and by patterning a conductive grid directly on the photosensitive surface for low series resistance.
Electron detection; Electron detectors; High efficiency; High sensitivity; Low energy electrons; Silicon photodiode; Scanning electron microscopy
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
Podaci o prilogu
31.4.1-31.4.4.
2010.
objavljeno
Podaci o matičnoj publikaciji
Technical Digest - International Electron Devices Meeting
San Francisco (CA): Institute of Electrical and Electronics Engineers (IEEE)
978-1-4424-7418-5
Podaci o skupu
IEEE International Electron Devices Meeting
predavanje
06.12.2010-08.12.2010
San Francisco (CA), Sjedinjene Američke Države