Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate (CROSBI ID 178278)
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Podaci o odgovornosti
Buljan, Maja ; Grenzer, J. ; Holý, V. ; Radić, Nikola ; Mišić-Radić, Tea ; Levichev, S. ; Bernstorff, S. ; Pivac, Branko ; Capan, Ivana
engleski
Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate
We report on structural properties and charge trapping in [(Ge+SiO2)/SiO2]×2 films deposited by magnetron sputtering on a periodically corrugated-rippled substrate and annealed in vacuum and forming gas. The rippled substrate caused a self-ordered growth of Ge quantum dots, while annealing in different environments enabled us to separate charge trapping in quantum dots from the trapping at the dot-matrix and matrix-substrate interfaces. We show that the charge trapping occurs mainly in Ge quantum dots in the films annealed in the forming gas, while Si–SiO2 interface trapping is dominant for the vacuum annealed films.
AFM ; charge trapping ; Ge+SiO2 bilayer films
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