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Pregled bibliografske jedinice broj: 549777

Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate


Buljan, Maja; Grenzer, J.; Holý, V.; Radić, Nikola; Mišić-Radić, Tea; Levichev, S.; Bernstorff, S.; Pivac, Branko; Capan, Ivana
Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate // Applied physics letters, 97 (2010), 16; 63117-63119 doi:10.1063/1.3504249 (međunarodna recenzija, članak, znanstveni)


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Naslov
Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate

Autori
Buljan, Maja ; Grenzer, J. ; Holý, V. ; Radić, Nikola ; Mišić-Radić, Tea ; Levichev, S. ; Bernstorff, S. ; Pivac, Branko ; Capan, Ivana

Izvornik
Applied physics letters (0003-6951) 97 (2010), 16; 63117-63119

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
AFM ; charge trapping ; Ge+SiO2 bilayer films

Sažetak
We report on structural properties and charge trapping in [(Ge+SiO2)/SiO2]×2 films deposited by magnetron sputtering on a periodically corrugated-rippled substrate and annealed in vacuum and forming gas. The rippled substrate caused a self-ordered growth of Ge quantum dots, while annealing in different environments enabled us to separate charge trapping in quantum dots from the trapping at the dot-matrix and matrix-substrate interfaces. We show that the charge trapping occurs mainly in Ge quantum dots in the films annealed in the forming gas, while Si–SiO2 interface trapping is dominant for the vacuum annealed films.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Kemija



POVEZANOST RADA


Projekti:
MZOS-098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Pivac, Branko, MZOS ) ( POIROT)
MZOS-098-0982934-2744 - Površinske sile na atomskoj skali u istraživanju mora i nanotehnologiji (Svetličić, Vesna, MZOS ) ( POIROT)
MZOS-098-0982886-2895 - Novi amorfni i nanostrukturirani tankoslojni materijali (Radić, Nikola, MZOS ) ( POIROT)

Ustanove:
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Nikola Radić (autor)

Avatar Url Branko Pivac (autor)

Avatar Url Tea Mišić Radić (autor)

Avatar Url Ivana Capan (autor)

Avatar Url Maja Mičetić (autor)

Citiraj ovu publikaciju:

Buljan, Maja; Grenzer, J.; Holý, V.; Radić, Nikola; Mišić-Radić, Tea; Levichev, S.; Bernstorff, S.; Pivac, Branko; Capan, Ivana
Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate // Applied physics letters, 97 (2010), 16; 63117-63119 doi:10.1063/1.3504249 (međunarodna recenzija, članak, znanstveni)
Buljan, M., Grenzer, J., Holý, V., Radić, N., Mišić-Radić, T., Levichev, S., Bernstorff, S., Pivac, B. & Capan, I. (2010) Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate. Applied physics letters, 97 (16), 63117-63119 doi:10.1063/1.3504249.
@article{article, author = {Buljan, Maja and Grenzer, J. and Hol\'{y}, V. and Radi\'{c}, Nikola and Mi\v{s}i\'{c}-Radi\'{c}, Tea and Levichev, S. and Bernstorff, S. and Pivac, Branko and Capan, Ivana}, year = {2010}, pages = {63117-63119}, DOI = {10.1063/1.3504249}, keywords = {AFM, charge trapping, Ge+SiO2 bilayer films}, journal = {Applied physics letters}, doi = {10.1063/1.3504249}, volume = {97}, number = {16}, issn = {0003-6951}, title = {Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate}, keyword = {AFM, charge trapping, Ge+SiO2 bilayer films} }
@article{article, author = {Buljan, Maja and Grenzer, J. and Hol\'{y}, V. and Radi\'{c}, Nikola and Mi\v{s}i\'{c}-Radi\'{c}, Tea and Levichev, S. and Bernstorff, S. and Pivac, Branko and Capan, Ivana}, year = {2010}, pages = {63117-63119}, DOI = {10.1063/1.3504249}, keywords = {AFM, charge trapping, Ge+SiO2 bilayer films}, journal = {Applied physics letters}, doi = {10.1063/1.3504249}, volume = {97}, number = {16}, issn = {0003-6951}, title = {Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate}, keyword = {AFM, charge trapping, Ge+SiO2 bilayer films} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


Citati:





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