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Pregled bibliografske jedinice broj: 544903

Heavily phosphorus doped polycrystalline silicon with the application in the field of thermoelectrics


Žonja, Sanja; Očko, Miroslav; Ivanda, Mile; Suligoj, Tomislav; Koričić, Marko; Biljanović, Petar
Heavily phosphorus doped polycrystalline silicon with the application in the field of thermoelectrics // NATO ADVANCED RESEARCH WORKSHOP New materials for thermoelectric applications: theory and experiment
Hvar, Hrvatska, 2011. (poster, nije recenziran, sažetak, znanstveni)


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Naslov
Heavily phosphorus doped polycrystalline silicon with the application in the field of thermoelectrics

Autori
Žonja, Sanja ; Očko, Miroslav ; Ivanda, Mile ; Suligoj, Tomislav ; Koričić, Marko ; Biljanović, Petar

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Skup
NATO ADVANCED RESEARCH WORKSHOP New materials for thermoelectric applications: theory and experiment

Mjesto i datum
Hvar, Hrvatska, 19-25.09.2011

Vrsta sudjelovanja
Poster

Vrsta recenzije
Nije recenziran

Ključne riječi
heavily doped polycrystalline silicon; phosphorus; thermoelectrics; thermopower; reistivity; low temperature measurements

Sažetak
Until recently, the field of thermoelectrics marked silicon as an utterly poorly performing material. However, in the recent few years, due to development of the experimental methods that influenced the decrease of the grain size in the polycrystalline material and lowering of dimensionality, silicon gained increased attention. In this study, we analyzed heavily phosphorus doped poylcrystalline silicon samples prepared in the following way: the amorphous samples were obtained using parallel flows of silane and phosphine in LPCVD furnace at 530°C and thereafter subjected to rapid thermal annealing in different time intervals at 950°C. According to SIMS, the concentration of phosphorus is 2·10<sup>20</sup> cm<sup>-3</sup> for each sample. Samples were analyzed using Raman spectroscopy, SEM, four point probe, low temperature resistivity and Seebeck coefficient measurements. Samples are in the metallic regime from the lowest temperatures measured. Seebeck coefficient shows linear temperature dependence above 150 K where the resistivity shows the T<sup>3/2</sup> dependence in the same temperature range. The quality of samples obtained in this way was evaluated by comparing them to some crystalline samples in the same dopant concentration range. We also discuss application possibilities of these samples as thermoelectrics and in microelectronics.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Elektrotehnika



POVEZANOST RADA


Projekt / tema
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Marko Koričić, )
035-0352827-2841 - Materijali sa elektronskom strukturom modeliranom modernim tehnikama priprave (Ivica Aviani, )
098-0982904-2898 - Fizika i primjena nanostruktura i volumne tvari (Mile Ivanda, )
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Tomislav Suligoj, )

Ustanove
Institut za fiziku, Zagreb,
Fakultet elektrotehnike i računarstva, Zagreb,
Institut "Ruđer Bošković", Zagreb

Citiraj ovu publikaciju

Žonja, Sanja; Očko, Miroslav; Ivanda, Mile; Suligoj, Tomislav; Koričić, Marko; Biljanović, Petar
Heavily phosphorus doped polycrystalline silicon with the application in the field of thermoelectrics // NATO ADVANCED RESEARCH WORKSHOP New materials for thermoelectric applications: theory and experiment
Hvar, Hrvatska, 2011. (poster, nije recenziran, sažetak, znanstveni)
Žonja, S., Očko, M., Ivanda, M., Suligoj, T., Koričić, M. & Biljanović, P. (2011) Heavily phosphorus doped polycrystalline silicon with the application in the field of thermoelectrics. U: NATO ADVANCED RESEARCH WORKSHOP New materials for thermoelectric applications: theory and experiment.
@article{article, year = {2011}, keywords = {heavily doped polycrystalline silicon, phosphorus, thermoelectrics, thermopower, reistivity, low temperature measurements}, title = {Heavily phosphorus doped polycrystalline silicon with the application in the field of thermoelectrics}, keyword = {heavily doped polycrystalline silicon, phosphorus, thermoelectrics, thermopower, reistivity, low temperature measurements}, publisherplace = {Hvar, Hrvatska} }




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