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Low Temperature Deposition of SiNx Thin Films by the LPCVD Method


Tijanić, Zdenko; Ristić, Davor; Ivanda, Mile; Bogdanović-Radović, Ivancica; Marciuš, Marijan; Ristić, Mira; Gamulin, Ozren; Musić, Svetozar; Furić, Kresimir; Chiasera, Alesandro et al.
Low Temperature Deposition of SiNx Thin Films by the LPCVD Method // Croatica chemica acta, 85 (2012), 1; 97-100 doi:10.5562/cca1970 (međunarodna recenzija, članak, znanstveni)


Naslov
Low Temperature Deposition of SiNx Thin Films by the LPCVD Method

Autori
Tijanić, Zdenko ; Ristić, Davor ; Ivanda, Mile ; Bogdanović-Radović, Ivancica ; Marciuš, Marijan ; Ristić, Mira ; Gamulin, Ozren ; Musić, Svetozar ; Furić, Kresimir ; Chiasera, Alesandro ; Ferrari, Maurizio ; Righini, Giancarlo Cesare

Izvornik
Croatica chemica acta (0011-1643) 85 (2012), 1; 97-100

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Silicon-rich nitride; LPCVD

Sažetak
Thin silicon rich nitride (SiNx) films were deposited using the LPCVD (Low Pressure Chemical Vapor Deposition) method. Silane diluted in argon and ammonia were used as the reactant gasses, and the low temperature deposition at 570 oC was used. The films were deposited on silicon (111) substrates. Films with the different values of the nitrogen content were deposited by varying the ratio of the flows of ammonia and silane in the horizontal tube reactor. The films were characterized in terms on the surface quality (by scanning electron microscopy), in terms of the nitrogen content x by time of flight elastic recoil detection analysis and by Raman and FTIR spectroscopy. The thickness and dielectric constant were measured by ellipsometry. The films were found to have a very smooth, homogeneous surface with nitrogen content that vary from x=0 to x=1 in dependence on the deposition parameters. The intensity of the Si-N stretching peak has shown strong correlation with the film thickness measured by ellipsometry. The films showed a smooth surface layer and the value of dielectric constant easily controllable by the ratio of the flow of the gases in the reactor.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Kemija



POVEZANOST RADA


Projekt / tema
098-0982904-2898 - Fizika i primjena nanostruktura i volumne tvari (Mile Ivanda, )
098-0982904-2952 - Sinteza i mikrostruktura metalnih oksida i oksidnih stakala (Mira Ristić, )
098-1191005-2876 - Procesi interakcije ionskih snopova i nanostrukture (Milko Jakšić, )

Ustanove
Institut "Ruđer Bošković", Zagreb

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


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