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Low Temperature Deposition of SiNx Thin Films by the LPCVD Method


Tijanić, Zdenko; Ristić, Davor; Ivanda, Mile; Bogdanović - Radović, Ivancica; Marciuš, Marijan; Ristić, Mira; Gamulin, Ozren; Musić, Svetozar; Furić, Kresimir; Chiasera, Alesandro et al.
Low Temperature Deposition of SiNx Thin Films by the LPCVD Method // Proceedings of 34nd International Convention MIPRO 2011 / Biljanovic, Petar ; Skala, Karol (ur.).
Rijeka: Denona, 2011. str. 45-46 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


Naslov
Low Temperature Deposition of SiNx Thin Films by the LPCVD Method

Autori
Tijanić, Zdenko ; Ristić, Davor ; Ivanda, Mile ; Bogdanović - Radović, Ivancica ; Marciuš, Marijan ; Ristić, Mira ; Gamulin, Ozren ; Musić, Svetozar ; Furić, Kresimir ; Chiasera, Alesandro ; Ferrari, Maurizio ; Righini, Giancarlo Cesare

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of 34nd International Convention MIPRO 2011 / Biljanovic, Petar ; Skala, Karol - Rijeka : Denona, 2011, 45-46

ISBN
978-953-233-060-1

Skup
34th international conference MIPRO 2011

Mjesto i datum
Opatija, Hrvatska, 24-27.5.2011

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Silicon-rich nitride; LPCVD

Sažetak
Thin silicon rich nitride (SiNx) films were deposited using the LPCVD (Low Pressure Chemical Vapor Deposition) method. Films with the different values of the nitrogen content were deposited by varying the ratio of the flows of ammonia and silane in the horizontal tube reactor. The films were characterized in terms on the surface quality (by scanning electron microscopy), in terms of the nitrogen content x by time of flight elastic recoil detection analysis and by Raman and FTIR spectroscopy.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
098-0982904-2898 - Fizika i primjena nanostruktura i volumne tvari (Mile Ivanda, )

Ustanove
Institut "Ruđer Bošković", Zagreb