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Thermal decomposition of silicon-rich oxides deposited by the LPCVD method


Ristić, Davor; Ivanda, Mile; Furić, Krešimir; Chiasera, Alessandro; Moser, Enrico; Ferrari, Maurizio
Thermal decomposition of silicon-rich oxides deposited by the LPCVD method // Proceedings of 34nd International Convention MIPRO 2011 , vol. 1 MEET & GVS / Biljanovic, Petar ; Skala, Karol (ur.).
Rijeka: Denona, 2011. str. 47-48 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


Naslov
Thermal decomposition of silicon-rich oxides deposited by the LPCVD method

Autori
Ristić, Davor ; Ivanda, Mile ; Furić, Krešimir ; Chiasera, Alessandro ; Moser, Enrico ; Ferrari, Maurizio

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of 34nd International Convention MIPRO 2011 , vol. 1 MEET & GVS / Biljanovic, Petar ; Skala, Karol - Rijeka : Denona, 2011, 47-48

ISBN
978-953-233-060-1

Skup
34nd International Convention MIPRO 2011

Mjesto i datum
Opatija, Hrvatska, 23-27.5.2011

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Silicon rich oxide; Low Pressure Chemical Vapour Deposition; Raman spectroscopy

Sažetak
Silicon-rich oxide(SiOx, 0<x<2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570 oC using silane (SiH4) and oxygen as the reactant gasses. The films were annealed at temperatures of 800 oC, 900 oC, 1000 oC and 1100 oC to induce the separation of excess silicon in the SiOx films into nanosized crystalline silicon particles inside an amorphous SiOx matrix. The size of the silicon particles was determined using Raman spectroscopy.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
098-0982904-2898 - Fizika i primjena nanostruktura i volumne tvari (Mile Ivanda, )

Ustanove
Institut "Ruđer Bošković", Zagreb