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Thermal decomposition of silicon-rich oxides deposited by the LPCVD method

Silicon-rich oxide(SiOx, 0<x<2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570 oC using silane (SiH4) and oxygen as the reactant gasses. The films were annealed at temperatures of 800 oC, 900 oC, 1000 oC and 1100 oC to induce the separation of excess silicon in the SiOx films into nanosized crystalline silicon particles inside an amorphous SiOx matrix. The size of the silicon particles was determined using Raman spectroscopy.

Silicon rich oxide; Low Pressure Chemical Vapour Deposition; Raman spectroscopy

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