Low-temperature fabrication of layered selforganized Ge clusters by RF-sputtering (CROSBI ID 174962)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Pinto, Sara R.C. ; Rolo, Anabela G. ; Buljan, Maja ; Chahboun, Adil ; Bernstorff, Sigrid ; Barradas, Nuno P. ; Alves, Eduardo ; Kashtiban, Reza J. ; Bangert, Ursel ; Gomes, Maria J.M.
engleski
Low-temperature fabrication of layered selforganized Ge clusters by RF-sputtering
In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C.
self-organized; Ge; GISAXS; magnetron sputtering
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Podaci o izdanju
6
2011.
341-1-341-7
objavljeno
1931-7573
1556-276X
10.1186/1556-276X-6-341