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Pregled bibliografske jedinice broj: 531096

Low-temperature fabrication of layered selforganized Ge clusters by RF-sputtering


Pinto, Sara R.C.; Rolo, Anabela G.; Buljan, Maja; Chahboun, Adil; Bernstorff, Sigrid; Barradas, Nuno P.; Alves, Eduardo; Kashtiban, Reza J.; Bangert, Ursel; Gomes, Maria J.M.
Low-temperature fabrication of layered selforganized Ge clusters by RF-sputtering // Nanoscale Research Letters, 6 (2011), 341-1 doi:10.1186/1556-276X-6-341 (međunarodna recenzija, članak, znanstveni)


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Naslov
Low-temperature fabrication of layered selforganized Ge clusters by RF-sputtering

Autori
Pinto, Sara R.C. ; Rolo, Anabela G. ; Buljan, Maja ; Chahboun, Adil ; Bernstorff, Sigrid ; Barradas, Nuno P. ; Alves, Eduardo ; Kashtiban, Reza J. ; Bangert, Ursel ; Gomes, Maria J.M.

Izvornik
Nanoscale Research Letters (1931-7573) 6 (2011); 341-1

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
self-organized; Ge; GISAXS; magnetron sputtering

Sažetak
In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekti:
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Pivac, Branko, MZOS ) ( POIROT)

Ustanove:
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Maja Mičetić (autor)

Poveznice na cjeloviti tekst rada:

doi rd.springer.com rd.springer.com

Citiraj ovu publikaciju:

Pinto, Sara R.C.; Rolo, Anabela G.; Buljan, Maja; Chahboun, Adil; Bernstorff, Sigrid; Barradas, Nuno P.; Alves, Eduardo; Kashtiban, Reza J.; Bangert, Ursel; Gomes, Maria J.M.
Low-temperature fabrication of layered selforganized Ge clusters by RF-sputtering // Nanoscale Research Letters, 6 (2011), 341-1 doi:10.1186/1556-276X-6-341 (međunarodna recenzija, članak, znanstveni)
Pinto, S., Rolo, A., Buljan, M., Chahboun, A., Bernstorff, S., Barradas, N., Alves, E., Kashtiban, R., Bangert, U. & Gomes, M. (2011) Low-temperature fabrication of layered selforganized Ge clusters by RF-sputtering. Nanoscale Research Letters, 6, 341-1 doi:10.1186/1556-276X-6-341.
@article{article, author = {Pinto, Sara R.C. and Rolo, Anabela G. and Buljan, Maja and Chahboun, Adil and Bernstorff, Sigrid and Barradas, Nuno P. and Alves, Eduardo and Kashtiban, Reza J. and Bangert, Ursel and Gomes, Maria J.M.}, year = {2011}, pages = {341-1-341-7}, DOI = {10.1186/1556-276X-6-341}, keywords = {self-organized, Ge, GISAXS, magnetron sputtering}, journal = {Nanoscale Research Letters}, doi = {10.1186/1556-276X-6-341}, volume = {6}, issn = {1931-7573}, title = {Low-temperature fabrication of layered selforganized Ge clusters by RF-sputtering}, keyword = {self-organized, Ge, GISAXS, magnetron sputtering} }
@article{article, author = {Pinto, Sara R.C. and Rolo, Anabela G. and Buljan, Maja and Chahboun, Adil and Bernstorff, Sigrid and Barradas, Nuno P. and Alves, Eduardo and Kashtiban, Reza J. and Bangert, Ursel and Gomes, Maria J.M.}, year = {2011}, pages = {341-1-341-7}, DOI = {10.1186/1556-276X-6-341}, keywords = {self-organized, Ge, GISAXS, magnetron sputtering}, journal = {Nanoscale Research Letters}, doi = {10.1186/1556-276X-6-341}, volume = {6}, issn = {1931-7573}, title = {Low-temperature fabrication of layered selforganized Ge clusters by RF-sputtering}, keyword = {self-organized, Ge, GISAXS, magnetron sputtering} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus


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