Features of Electron Mobility in Ultrathin-Body InGaAs-On-Insulator MOSFETs down to Body Thickness of 2 nm (CROSBI ID 576432)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
engleski
Features of Electron Mobility in Ultrathin-Body InGaAs-On-Insulator MOSFETs down to Body Thickness of 2 nm
Behavior of electron mobility in UTB InGaAs-OI MOSFETs is studied by physics-based modeling. We have shown that UTB InGaAs-OI devices outperform Silicon-OI MOSFETs only for TS > 6.2 nm, due to high SR scattering. Therefore, improvement of interface quality remains crucial to utilize high electron mobility in extremely scaled InGaAs-OI devices.
indium-gallium-arsenide (InGaAs); physics-based modeling; electron mobility; quantum confinement; effective mass; bandstructure effects; ultra-thin body; FinFET; silicon-on-insulator (SOI)
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Podaci o prilogu
156-157.
2011.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of the 2011 IEEE International SOI Conference
W. Xiong
Tempe (AZ): Institute of Electrical and Electronics Engineers (IEEE)
978-1-61284-759-7
Podaci o skupu
2011 IEEE International SOI Conference
predavanje
03.10.2011-06.10.2011
Tempe (AZ), Sjedinjene Američke Države
