engleski

Micro and nano structure of electrochemically etched silicon epitaxial wafers

Silicon epitaxial wafers, consisting of 280 microm thick n-type substrate layer and 4-5 microm thick epitaxial layer, were electrochemically etched in hydrofluoric acid ethanol solution, to produce porous silicon samples. The resistivity of epitaxial layer was 1 ohmcm, while the substrate was much better conductor with resistivity 0.015 ohmcm. By varying the etching time, the micro- and nano-pores of different sizes were obtained within the epitaxial layer, and on the substrate surface. Due to the lateral etching the epitaxial layer was partially detached from the substrate and could be peeled off. The influence of etching time duration on the optical and structural properties of porous samples was investigated by Raman, infrared and photoluminescence spectroscopy. The samples were analysed immediately after the etching and six months later, while being stored in ambient air. The Raman spectra showed the shift in positions of transversal optical (TO) phonon bands, between freshly etched samples and the one stored in ambient air. Infrared spectra indicated the presence of SiHx species in the freshly etched samples, and appearance of oxidation after prolonged storage. Photoluminescence spectra were very weak in freshly etched samples, but their intensity has increased substantially in six month period.

porous silicon ; epitaxial wafers ; Raman spectroscopy ; FTIR ; photoluminescence

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