Trapping Surface Electrons on Graphene Layers and Islands (CROSBI ID 173894)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Niesner, Daniel ; Fauster, Thomas ; Dadap, Jerry I. ; Knox, Kevin R. ; Yeh, Po-Chun ; Bandari, Rohan ; Osgood, Richard M. ; Petrović, Marin ; Kralj, Marko
engleski
Trapping Surface Electrons on Graphene Layers and Islands
We report the use of time- and angle-resolved two-photon photoemission to map the bound, unoccupied electronic structure of the weakly coupled graphene/Ir(111) system. The energy, dis- persion, and lifetime of the lowest three image-potential states are measured. In addition, the weak interaction between Ir and graphene permits observation of resonant transitions from an unquenched Shockley-type surface state of the Ir substrate to graphene/Ir image-potential states. The image-potential-state lifetimes are comparable to those of mid-gap clean metal surfaces. Evidence of localization of the excited electrons on single-atom-layer graphene islands is provided by coverage-dependent measurements.
graphene; image potential states
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Podaci o izdanju
85 (8)
2012.
081402-1-081402-5
objavljeno
1098-0121
10.1103/PhysRevB.85.081402