Electrical Characterization of Ge Nanocrystals in Oxide Matrix (CROSBI ID 574602)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Capan, Ivana ; Buljan, Maja ; Mišićc-Radic, Tea ; Pivac, Branko ; Radić, Nikola ; Grenzer, Joerg ; Holy, Vaclav ; Levichev, Sergey ; Bernstorff, Sigrid
engleski
Electrical Characterization of Ge Nanocrystals in Oxide Matrix
We report on electrical properties in [(Ge+SiO2)/SiO2]×2 films deposited by magnetron sputtering on a periodically corrugated-rippled substrate and annealed in vacuum and forming gas. The rippled substrate caused a self-ordered growth of Ge quantum dots, while annealing in different environments enabled us to separate charge trapping in quantum dots from the trapping at the dot-matrix and matrix-substrate interfaces. We show that the charge trapping occurs mainly in Ge quantum dots in the films annealed in the forming gas, while Si–SiO2 interface trapping is dominant for the vacuum annealed films.
Ge ; nanocrystals ; C-V ; DLTS
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Podaci o prilogu
1-1.
2010.
objavljeno
10.1557/opl.2011.298
Podaci o matičnoj publikaciji
MRS Online Proceedings Library
Cambridge University Press
Podaci o skupu
MRS Fall Meeting
poster
29.11.2010-03.12.2010
Boston (MA), Sjedinjene Američke Države