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Electrical Characterization of Ge Nanocrystals in Oxide Matrix


Capan, Ivana; Buljan, Maja; Mišićc-Radic, Tea; Pivac, Branko; Radić, Nikola; Grenzer, Joerg; Holy, Vaclav; Levichev, Sergey; Bernstorff, Sigrid
Electrical Characterization of Ge Nanocrystals in Oxide Matrix // MRS Online Proceedings Library
Boston, SAD: Cambridge University Press, 2010. str. 1-1 doi:10.1557/opl.2011.298 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


Naslov
Electrical Characterization of Ge Nanocrystals in Oxide Matrix

Autori
Capan, Ivana ; Buljan, Maja ; Mišićc-Radic, Tea ; Pivac, Branko ; Radić, Nikola ; Grenzer, Joerg ; Holy, Vaclav ; Levichev, Sergey ; Bernstorff, Sigrid

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
MRS Online Proceedings Library / - : Cambridge University Press, 2010, 1-1

Skup
MRS Fall Meeting

Mjesto i datum
Boston, SAD, 29.11.-03.12.2010

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Ge ; nanocrystals ; C-V ; DLTS

Sažetak
We report on electrical properties in [(Ge+SiO2)/SiO2]×2 films deposited by magnetron sputtering on a periodically corrugated-rippled substrate and annealed in vacuum and forming gas. The rippled substrate caused a self-ordered growth of Ge quantum dots, while annealing in different environments enabled us to separate charge trapping in quantum dots from the trapping at the dot-matrix and matrix-substrate interfaces. We show that the charge trapping occurs mainly in Ge quantum dots in the films annealed in the forming gas, while Si–SiO2 interface trapping is dominant for the vacuum annealed films.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Branko Pivac, )
098-0982886-2895 - Novi amorfni i nanostrukturirani tankoslojni materijali (Nikola Radić, )

Ustanove
Institut "Ruđer Bošković", Zagreb

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