engleski

Defects in silicon introduced by helium implantation and subsequent annealing

Formation and morphology of defects, including bubbles and voids, induced in silicon by He+ implantation and subsequent high temperature and pressure treatment have been studied by means of X-ray diffraction method and grazing incidence small angle X-ray scattering (GISAXS). Enhanced pressure affects the formation of voids and/or of large cavities inducing creation of faceted structures. Moreover, high pressure treatment suppresses creation of interstitial-related defects.

silicon ; implantation ; defect structure ; GISAXS ; annealing ; hydrostatic pressure

Rad je prezentiran na skupu The 10th International School and Symposium on Synchrotron Radiation in Natural Science (ISSRNS) : Synchrotron radiation studies in Poland ; Maciej Kozak, Wojciech Paszkowicz, Pawel Piszora (ur.).