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Stoppping power of He, C and O in InN


Barradas, N.P.; Alves, E.; Siketić, Zdravko; Bogdanović-Radović, Ivančica
Stoppping power of He, C and O in InN // AIP conference proceedings, 1336 (2011), 319-322 doi:10.1063/1.3586112 (podatak o recenziji nije dostupan, članak, znanstveni)


Naslov
Stoppping power of He, C and O in InN

Autori
Barradas, N.P. ; Alves, E. ; Siketić, Zdravko ; Bogdanović-Radović, Ivančica

Izvornik
AIP conference proceedings (0094-243X) 1336 (2011); 319-322

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Stopping power ; indium nitride ; heavy ions

Sažetak
Group III nitrides such as InN, GaN, and their alloys are increasingly important in a host of optoelectronic and electronic devices. The presence of unintentional impurities is one of the factors that can strongly affect the electronic properties of these materials, and thus ion beam analysis techniques can play a fundamental role, in particular heavy ion elastic recoil detection analysis tracing and quantifying these contaminations. However, stopping powers in InN and GaN have not yet been measured, and data analysis relies on using the Bragg rule, which is often inaccurate. We have used a bulk method, previously developed by us and applied successfully to other systems, to determine experimentally the stopping power of several ions in InN. The results of our measurements and bulk method analysis are presented.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA


Projekt / tema
098-1191005-2876 - Procesi interakcije ionskih snopova i nanostrukture (Milko Jakšić, )

Ustanove
Institut "Ruđer Bošković", Zagreb

Citati