Napredna pretraga

Pregled bibliografske jedinice broj: 515332

Structural and Electronic Properties of Heavily Phosphorus Doped Polycrystalline Silicon Thin Films


Žonja, Sanja; Ivanda, Mile; Očko, Miroslav; Suligoj, Tomislav; Koričić, Marko; Biljanović, Petar
Structural and Electronic Properties of Heavily Phosphorus Doped Polycrystalline Silicon Thin Films // Proceedings of 34th International Convention MIPRO 2011 / Biljanović, Petar ; Skala, Karolj (ur.).
Rijeka: Denona, Zagreb, 2011. str. 55-60 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


Naslov
Structural and Electronic Properties of Heavily Phosphorus Doped Polycrystalline Silicon Thin Films

Autori
Žonja, Sanja ; Ivanda, Mile ; Očko, Miroslav ; Suligoj, Tomislav ; Koričić, Marko ; Biljanović, Petar

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of 34th International Convention MIPRO 2011 / Biljanović, Petar ; Skala, Karolj - Rijeka : Denona, Zagreb, 2011, 55-60

ISBN
978-953-233-060-1

Skup
MIPRO 2011, 34th International Convention on Information and Communication Technology, Electronics and Microelectronics

Mjesto i datum
Opatija, Hrvatska, 23-27.05.2011

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Heavily doped polycrystalline silicon; phosphorus; thermoelectrics; thermopower; reistivity; low temperature measurements

Sažetak
In the last few years, silicon has drawn increased attention due to the possible application as thermoelectric material. In this paper we are presenting the results of the investigation on several heavily phosphorus doped polycrystalline silicon thin films. The samples were prepared in LPCVD reactor and then subjected to rapid thermal annealing in different time intervals (20, 30 and 45 seconds). They are characterized using different techniques. Four point probe resistivity measurements, scanning electron microscopy and Raman spectroscopy are used to give a valuable insight into the structural characteristics such as the grain size, degree of crystallinity and the free carrier concentration. On the basis of the room temperature resistivity, concentration of free carriers was determined to be around 1e20 cm^(-3) for all the samples. A special stress was set to the low temperature measurements which include resistivity measurements down to 4.2 K together with Seebeck coefficient data down to 80 K. These measurements enabled us to reveal some essential features of the electronic structure of the investigated systems. For all the samples, electrical resistivity shows the T^(3/2) dependence in the wide temperature range (for some samples even from 50 to 300 K). The resistivities of the samples show that the samples are in metallic regime from the lowest measured temperatures. The thermopower behavior suggests that we can treat the transport properties within the free electron model. A comprehensive study was made to combine suitable theories appropriate in the analysis of results.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Elektrotehnika



POVEZANOST RADA


Projekt / tema
035-0352827-2841 - Materijali sa elektronskom strukturom modeliranom modernim tehnikama priprave (Ivica Aviani, )
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Tomislav Suligoj, )
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Marko Koričić, )
098-0982904-2898 - Fizika i primjena nanostruktura i volumne tvari (Mile Ivanda, )

Ustanove
Institut za fiziku, Zagreb,
Fakultet elektrotehnike i računarstva, Zagreb,
Institut "Ruđer Bošković", Zagreb