X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor (CROSBI ID 172044)
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Podaci o odgovornosti
Hrauda, Nina ; Zhang, Jianjun ; Wintersberger, Eugen ; Etzelstorfer, Tanja ; Mandl, Bernhard ; Stangl, Julian ; Carbone, Dina ; Holý, Vaclav ; Jovanović, Vladimir ; Biasotto, Cleber ; Nanver, Lis K. ; Moers, Jürgen ; Grützmacher, Detlev ; Bauer, Günther
engleski
X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor
For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si–metal– oxide semiconductor field-effect transistor.
X-ray nanodiffraction; semiconductor nanostructures; structural investigations; finite element simulations; ordered island growth; silicon germanium
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