Physics-Based Modeling of Hole Mobility in Ultrathin-Body Silicon-On-Insulator MOSFETs (CROSBI ID 572990)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
engleski
Physics-Based Modeling of Hole Mobility in Ultrathin-Body Silicon-On-Insulator MOSFETs
A comprehensive study of hole mobility behavior with downscaling of silicon body thickness in single-gate ultrathin-body silicon-on-insulator MOSFETs on (100) surface is performed. We present a physics-based model that includes optical and acoustic phonon scattering, surface roughness scattering (including scattering induced by silicon thickness fluctuations) and Coulomb scattering. Although the model is based on effective mass approximation, comparison of simulation results and experimental data shows an excellent agreement, from 30 nm down to 3.8 nm-thick SOI pMOSFETs.
physics-based modeling; hole mobility; hole scattering; quantum confinement; ultra-thin silicon
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Podaci o prilogu
71-76.
2011.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of the 34th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) - Vol I. MEET and GVS
Biljanović, Petar ; Skala, Karolj
Zagreb: Denona
978-953-233-060-1
Podaci o skupu
34th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
predavanje
23.05.2011-27.05.2011
Opatija, Hrvatska