X-ray diffraction study of semiconducting compounds (AxB(1-x))2(CxD(1-x))3 ; A, B = Al, Ga, In ; C, D = S, Se, Te. (CROSBI ID 572564)
Prilog sa skupa u zborniku | sažetak izlaganja sa skupa | međunarodna recenzija
Podaci o odgovornosti
Popović, Stanko ; Čelustka, Branko ; Gržeta, Biserka ; Tonejc, Antun ; Etlinger, Božidar ; Desnica, Dunja
engleski
X-ray diffraction study of semiconducting compounds (AxB(1-x))2(CxD(1-x))3 ; A, B = Al, Ga, In ; C, D = S, Se, Te.
The title compounds, studied systematically in the last decade, may be treated as inferred from the ZnS, zincblende (ZB) and wurtzite (W), structural types, the metal ions occupying two thirds of the available positions. The ordering of the metal ions in tetrahedral and octahedral interstices yieldsvarius polytypes, superstructures and OD-structures, depending on the synthesis, composition and temperature. The systems studied by X-ray diffraction (crystal data, thermal expansion, phase diagrams, diffraction broadening ; an original Fortran program for calculation of interplanar spacings, in accordance with the conditions for possible reflexions, facilitated the the indexing of diffractions patterns) and other methods (electrical, DTA, electron probe microanalysis of the following semiconducting compounds: In2Se3, (GaxIn(1-x))2Se3, (AlxIn(1-x))2Se3, (AlxIn(1-x))2S3, (GaxIn81-x))2(SexTe(1-x))3.
diffraction data; compound III2VI3
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Podaci o prilogu
1980.
objavljeno
Podaci o matičnoj publikaciji
Sixth European crysallographic meeting, Book of abstract
Barcelona: International Union of Crystallography
Podaci o skupu
Sixth European crysallographic meeting, Barcelona, Spain July 28 - August 1, 1980
predavanje
28.07.1980-01.08.1980
Barcelona, Španjolska