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Effect of Dangling Bonds on Transient Response of p- i-n a-Si:H Photodiode (CROSBI ID 171027)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Gradišnik, Vera ; Linić, Antonio ; Šverko, Mladen Effect of Dangling Bonds on Transient Response of p- i-n a-Si:H Photodiode // Informacije MIDEM, 41 (2011), 3; 161-167

Podaci o odgovornosti

Gradišnik, Vera ; Linić, Antonio ; Šverko, Mladen

engleski

Effect of Dangling Bonds on Transient Response of p- i-n a-Si:H Photodiode

The transient photocurrent of a-Si:H p-i-n photodiode as a three-color detector under simultaneously pulsed visible light illumination and forward voltage pulse at low reverse bias voltage and low frequency conditions were studied. The characteristic transient response properties are attributed to the effect of the spatial distribution of defect states in the i-layer. They act temporally as recombination or generation centers. The results are useful in directing further investigation of the observed effect regard light illumination energy with application in color sensor in an active pixel sensor.

amorphous silicon; transient response; trapping and recombination; photodiode

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Podaci o izdanju

41 (3)

2011.

161-167

objavljeno

0352-9045

2232-6979

Povezanost rada

Elektrotehnika