Effect of Dangling Bonds on Transient Response of p- i-n a-Si:H Photodiode (CROSBI ID 171027)
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Gradišnik, Vera ; Linić, Antonio ; Šverko, Mladen
engleski
Effect of Dangling Bonds on Transient Response of p- i-n a-Si:H Photodiode
The transient photocurrent of a-Si:H p-i-n photodiode as a three-color detector under simultaneously pulsed visible light illumination and forward voltage pulse at low reverse bias voltage and low frequency conditions were studied. The characteristic transient response properties are attributed to the effect of the spatial distribution of defect states in the i-layer. They act temporally as recombination or generation centers. The results are useful in directing further investigation of the observed effect regard light illumination energy with application in color sensor in an active pixel sensor.
amorphous silicon; transient response; trapping and recombination; photodiode
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Elektrotehnika