engleski

Numerical simulation of the n-p color sensor

Numerical simulation results of the electrostatic potential, the electron and hole carriers concentration and photoresponse are presented for a n-p device structure that will be used for a simultaneous detection of the three primary colors. The simulation is based on a simultaneous solution of Poisson's equation and the electron and hole continuity equations in two dimensions, using the commercial device simulation program (MEDICI). The photogeneration of the electron-hole pair is modeled by using the wavelength dependence of absorption in silicon.

color sensor; numerical simulaton

Ovaj rad je vazan uz projekt 2-07-266 "Elektronika i mikroelektronika" financiranom od Ministarstva znanosti i tehnologije Republike Hrvatske