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Numerical analysis of Si NP photodiode color detection properties

One-junction Si NP photodiode promises useful application in solid state image sensors as a simultaneous color detector. Analysis of photodiode properties (spectral response, linearity, photocurrent, carrier concenrtations and electric field) gives useful information on color detection. Using the simulation program MEDICI a two-dimensional simulation of the electro-optical behaviour of a Si NP photodiode was carried out. The Poisson's equation and the electron and hole continuity equations were simultaneously solved using Newton's method for two carriers. Using Powell's method the coefficients, equal to the primary colors photon flux, were extracted.

numerical modeling; color detector; photodiode

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