Nalazite se na CroRIS probnoj okolini. Ovdje evidentirani podaci neće biti pohranjeni u Informacijskom sustavu znanosti RH. Ako je ovo greška, CroRIS produkcijskoj okolini moguće je pristupi putem poveznice www.croris.hr
izvor podataka: crosbi

Preparation of ternary semiconducting compound Al2In12Se21 (CROSBI ID 170884)

Prilog u časopisu | izvorni znanstveni rad

Desnica, Dunja ; Desnica, Uroš ; Etlinger, Božidar Preparation of ternary semiconducting compound Al2In12Se21 // Fizika (Zagreb), 10 (1978), Suplement; 29-33

Podaci o odgovornosti

Desnica, Dunja ; Desnica, Uroš ; Etlinger, Božidar

engleski

Preparation of ternary semiconducting compound Al2In12Se21

In a search for semiconducting compounds with the energy gaps corresponding to the visible portion of the optical spectrum, we have turned our attention to the ternary compound Al2In12Se21 (Al2Se3+6In2Se3) in Al-In-Se system. To our knowledge, this potentially prosperous material has not yet been synthetised and investigated mainly due two reasons: a) Constituents of the compoun have drastically different vapour pressures, so that the problem of very high vapour pressure of selenium appeares at the typical temperatures in common methods of crystal growth, and b) elemental Al react with silica (quartz) crucible forming Al2O3, so it is necessary to avoid direct contact of aluminum and silica at high temperatures.

preparation ; ternary compound ; Al-In-Se

predavanje, međunarodna recenzija, članak, znanstveni

nije evidentirano

nije evidentirano

nije evidentirano

nije evidentirano

nije evidentirano

Podaci o izdanju

10 (Suplement)

1978.

29-33

objavljeno

0015-3206

Povezanost rada

Fizika