engleski

Study of defects in p-type silicon implanted with channeled low energy phosphorous ions

Phosphorous ions with energy of 40 keV were implanted in p-type silicon at the room temperature in the (111) direction. Low fluences of 10(12) and 10(13) ions/cm2 were used. The temperature dependence of the Hall technique, were made on van der Pauw geometry of "mesa" structure samples after anneling at higher temperatures starting from 250C. A shallow phosphorous donor level (Ec -0.044 eV) has been found in the highly compensated samples annealed at 450C. At the higher temperatures (550C, 650C) two deeper localized energy levels: Ec -0.21 eV and Ec -0.42 eV were determined and associated with multiple Vacancy-phosphorous complexes. It has been found that degeneracy in the samples does not occur for the above experimental conditions.

implantation ; defects ; silicon

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